Extending gate dielectric scaling by using ALD HfO2/SrTiO3 stacks

Maes, JanJanMaesMachkaoutsan, VladimirVladimirMachkaoutsanPierreux, DieterDieterPierreuxBlomberg, TomTomBlombergSwerts, JohanJohanSwertsSchram, TomTomSchramAdelmann, ChristophChristophAdelmannDelabie, AnneliesAnneliesDelabieVan Elshocht, SvenSvenVan ElshochtPopovici, Mihaela IoanaMihaela IoanaPopoviciConard, ThierryThierryConardTseng, JoshuaJoshuaTsengRagnarsson, Lars-AkeLars-AkeRagnarsson2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17545Extending gate dielectric scaling by using ALD HfO2/SrTiO3 stacksMeeting abstract