Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using Deep-Level Transient Fourier Spectroscopy

Lechaux, YoannYoannLechauxMinj, AlbertAlbertMinjMechin, LaurenceLaurenceMechinLiang, HuHuLiangGeens, KarenKarenGeensZhao, MingMingZhaoSimoen, EddyEddySimoenGuillet, BrunoBrunoGuillet2021-10-282021-10-2820200268-1242https://imec-publications.be/handle/20.500.12860/35444Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using Deep-Level Transient Fourier SpectroscopyJournal articlehttps://doi.org/10.1088/1361-6641/abcb19