Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices

Adelmann, ChristophChristophAdelmannLin, DennisDennisLinNyns, LauraLauraNynsSchepers, BartBartSchepersDelabie, AnneliesAnneliesDelabieVan Elshocht, SvenSvenVan ElshochtCaymax, MattyMattyCaymax2021-10-192021-10-1920110167-9317https://imec-publications.be/handle/20.500.12860/18446Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devicesJournal article