Dominant layer for stress-induced positive charges in Hf-based gate stacks

Zhang, Jian F.Jian F.ZhangChang, M.H.M.H.ChangJi, Z.Z.JiLin, L.L.LinFerain, IsabelleIsabelleFerainGroeseneken, GuidoGuidoGroesenekenPantisano, LuigiLuigiPantisanoDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-172021-10-1720080741-3106https://imec-publications.be/handle/20.500.12860/14832Dominant layer for stress-induced positive charges in Hf-based gate stacksJournal article