Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy

Rosseel, ErikErikRosseelPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooTirrito, MatteoMatteoTirritoDouhard, BastienBastienDouhardRichard, OlivierOlivierRichardHoriguchi, NaotoNaotoHoriguchiKhazaka, RamiRamiKhazaka2021-10-292021-10-292020-07https://imec-publications.be/handle/20.500.12860/35856Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxyMeeting abstracthttps://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/142692