First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

Minari, HidekiHidekiMinariYoshida, ShinichiShinichiYoshidaSawada, KenKenSawadaNakazawa, MasashiMasashiNakazawaMerckling, ClementClementMercklingWaldron, NiamhNiamhWaldronGuo, WeimingWeimingGuoJiang, SijiaSijiaJiangCollaert, NadineNadineCollaertSimoen, EddyEddySimoenLin, DennisDennisLinCaymax, MattyMattyCaymaxPourtois, GeoffreyGeoffreyPourtois2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24257First-principles studies of the defect formation in III-V FETs grown by aspect ratio trappingProceedings paperhttp://ecst.ecsdl.org/content/64/11/111.abstract