A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core

Yun, ByeonghunByeonghunYunPark, Dae-WoongDae-WoongParkChoi, Won-JongWon-JongChoiUsman Mahmood, HafizHafizUsman MahmoodLee, Sang-GugSang-GugLee2022-09-272021-11-022022-09-2720211531-1309WOS:000629021700017https://imec-publications.be/handle/20.500.12860/38083A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-CoreJournal article10.1109/LMWC.2020.3046745WOS:000629021700017