Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation

Wang, LinlinLinlinWangYu, HaoHaoYuSchaekers, MarcMarcSchaekersEveraert, Jean-LucJean-LucEveraertFranquet, AlexisAlexisFranquetDouhard, BastienBastienDouhardDate, LucienLucienDatedel Agua Borniquel, Jose IgnacioJose Ignaciodel Agua BorniquelHollar, KellyKellyHollarKhaja, FareenFareenKhajaAderhold, WolfgangWolfgangAderholdMayur, AbhilashAbhilashMayurLee, J.Y.J.Y.Leevan Meer, HansHansvan MeerMocuta, DanDanMocutaHoriguchi, NaotoNaotoHoriguchiCollaert, NadineNadineCollaertDe Meyer, KristinKristinDe MeyerJiang, Yu-LongYu-LongJiang2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29896Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activationProceedings paperhttp://ieeexplore.ieee.org/document/8268441/