Edge-enhanced Raman scattering in narrow sGe fin field-effect transistor channels

Nuytten, ThomasThomasNuyttenHantschel, ThomasThomasHantschelKosemura, DaisukeDaisukeKosemuraSchulze, AndreasAndreasSchulzeDe Wolf, IngridIngridDe WolfVandervorst, WilfriedWilfriedVandervorst2021-10-222021-10-2220150003-6951https://imec-publications.be/handle/20.500.12860/25697Edge-enhanced Raman scattering in narrow sGe fin field-effect transistor channelsJournal articlehttp://scitation.aip.org/content/aip/journal/apl/106/3/10.1063/1.4906537