Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates

Wang, GangGangWangRosseel, ErikErikRosseelLoo, RogerRogerLooFavia, PaolaPaolaFaviaBender, HugoHugoBenderCaymax, MattyMattyCaymaxHeyns, MarcMarcHeynsVandervorst, WilfriedWilfriedVandervorst2021-10-192021-10-192010-120021-8979https://imec-publications.be/handle/20.500.12860/18334Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substratesJournal articlehttp://link.aip.org/link/?JAP/108/123517