5 x 20 Gb/s III-V on silicon electroabsorption modulator array heteregoneously, integrared with a 1.6nm channel-spacing silicon AWG

Fu, XinXinFuHuang, QiangshengQiangshengHuangHu, YingtaoYingtaoHuTassaert, MartijnMartijnTassaertVerbist, JochemJochemVerbistCheng, JianxinJianxinChengMa, KeqiKeqiMaZhang, JianhaoJianhaoZhangChen, KaixuanKaixuanChenZhang, ChenzhaoChenzhaoZhangShi, YaochengYaochengShiBauwelinck, JohanJohanBauwelinckRoelkens, GuntherGuntherRoelkensLiu, LiuLiuLiuHe, SailingSailingHe2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/252805 x 20 Gb/s III-V on silicon electroabsorption modulator array heteregoneously, integrared with a 1.6nm channel-spacing silicon AWGProceedings paperhttps://www.osapublishing.org/abstract.cfm?URI=CLEO_SI-2015-STu4F.2