Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing

Wilk, G. D.G. D.WilkGreen, MartinMartinGreenM.-Y., HoHoM.-Y.Busch, B. W.B. W.BuschSorsch, T. W.T. W.SorschKlemens, F. P.F. P.KlemensBrijs, BertBertBrijsvan Dover, R. B.R. B.van DoverKornblit, A.A.KornblitGustafsson, T.T.GustafssonGarfunkel, E.E.GarfunkelHillenius, S.S.HilleniusMonroe, D.D.MonroeKalavade, P.P.KalavadeHergenrother, J. M.J. M.Hergenrother2021-10-152021-10-152002https://imec-publications.be/handle/20.500.12860/7054Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealingProceedings paper