Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs

Pavanello, Marcelo AntonioMarcelo AntonioPavanelloMartino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenRooyackers, RitaRitaRooyackersCollaert, NadineNadineCollaertClaeys, CorCorClaeys2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14291Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETsProceedings paper