64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform

Kandeel, AhmedAhmedKandeelHiblot, GaspardGaspardHiblotPorret, ClementClementPorretSrinivasan, Srinivasan AshwynSrinivasan AshwynSrinivasanShimura, YosukeYosukeShimuraLoo, RogerRogerLooBerciano, MathiasMathiasBercianoTseng, Chih-Kuo NeilChih-Kuo NeilTsengMalik, DharmanderDharmanderMalikMilenin, AlexeyAlexeyMileninYudistira, DiditDiditYudistiraBalakrishnan, SadhishkumarSadhishkumarBalakrishnanShahin, AmirAmirShahinVaskasi, Javad RahimiJavad RahimiVaskasiVerheyen, PeterPeterVerheyenPantouvaki, MariannaMariannaPantouvakiChakrabarti, MaumitaMaumitaChakrabartiVelenis, DimitriosDimitriosVelenisFerraro, FilippoFilippoFerraroBan, YoojinYoojinBanVan Thourhout, DriesDriesVan ThourhoutVan Campenhout, JorisJorisVan Campenhout2025-03-232025-03-232025-MAR 10733-8724WOS:001442905100030https://imec-publications.be/handle/20.500.12860/4543764 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics PlatformJournal article10.1109/JLT.2024.3505957WOS:001442905100030OPTICAL INTERCONNECTSEQUIVALENT-CIRCUITWELLSNRZ