Patterning process and electrical yield optimization at the limits of single exposure EUV 0.33 NA: a pitch 26nm damascene process

Blanco, VictorVictorBlancoVandersmissen, KevinKevinVandersmissenDe Wachter, BartBartDe WachterNafus, K.K.NafusFeurprier, Y.Y.FeurprierThiam, A.A.ThiamHsu, A.A.HsuTabery, C.C.TaberyDoise, J.J.DoiseDe Schepper, P.P.De Schepper2025-03-062025-03-062024979-8-3503-8518-22380-632XWOS:001411360600019https://imec-publications.be/handle/20.500.12860/45324Patterning process and electrical yield optimization at the limits of single exposure EUV 0.33 NA: a pitch 26nm damascene processProceedings paper10.1109/IITC61274.2024.10732293979-8-3503-8517-5WOS:001411360600019