Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

Tyaginov, StanislavStanislavTyaginovBury, ErikErikBuryGrill, AlexanderAlexanderGrillYu, ZhuoqingZhuoqingYuMakarov, AlexanderAlexanderMakarovDe Keersgieter, AnAnDe KeersgieterVexler, MikhailMikhailVexlerVandemaele, MichielMichielVandemaeleWang, RunshengRunshengWangSpessot, AlessioAlessioSpessotVaisman Chasin, AdrianAdrianVaisman ChasinKaczer, BenBenKaczer2024-02-052023-12-312024-02-0520232072-666XWOS:001119977200001https://imec-publications.be/handle/20.500.12860/43334Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias RangeJournal article10.3390/mi14112018WOS:001119977200001SPHERICAL-HARMONICS EXPANSIONINDUCED MOSFET DEGRADATIONELECTRONRELIABILITYDEFECTSTRANSISTORSIMPACTCHARGEGATEMECHANISMSMEDLINE:38004876