High lateral electric field impact on the performance of Si-platform-based Ge pFinFETs

Oliveira, AlbertoAlbertoOliveiraAgopian, Paula GDPaula GDAgopianMartino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersCollaert, NadineNadineCollaertClaeys, CorCorClaeys2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29108High lateral electric field impact on the performance of Si-platform-based Ge pFinFETsProceedings paper