Application of single pulse dynamics to model program anderase cycling-induced defects in the tunnel oxide of charge-trapping devices

Bastos, JoaoJoaoBastosArreghini, AntonioAntonioArreghiniVerreck, DevinDevinVerreckSchanovsky, FranzFranzSchanovskyDegraeve, RobinRobinDegraeveLinten, DimitriDimitriLintenVan den Bosch, GeertGeertVan den BoschFurnemont, ArnaudArnaudFurnemont2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/32498Application of single pulse dynamics to model program anderase cycling-induced defects in the tunnel oxide of charge-trapping devicesProceedings paper