Gungor, BerkeBerkeGungorGielen, SenneSenneGielenZhang, YangYangZhangIngels, MarkMarkIngelsReynaert, PatrickPatrickReynaert2026-10-152026-10-152026979-8-3195-1804-01529-2517https://imec-publications.be/handle/20.500.12860/60568This work presents a 245-310 GHz heterogeneously integrated InP-FinFET CMOS sliding-IF transmitter (TX) with an on-chip antenna. The system consists of a 16-nm FinFET CMOS die that implements the baseband amplifiers, I/Q upconverter and a first LO multiplication step. The 250-nm InP DHBT die implements a second LO multiplication step, a second upconversion mixer, a power amplifier and an on-chip antenna. In continuous wave measurements, the TX shows an EIRP of more than 10 dBm from 245-300 GHz, with a peak of 14.6 dBm at 267 GHz. The performance of the TX is validated with over-the-air modulated measurements up to 57 cm distance and with data rates up to 40 Gbps. To the author's best knowledge, the TX achieves the highest single-element EIRP among all >200GHz transmitters with antenna on-chip implementations.engProceedings paper10.1109/rfic70222.2026.11602269WOS:001882096700017