Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors

Simoen, EddyEddySimoenDecoutere, StefaanStefaanDecoutereCuthbertson, AlanAlanCuthbertsonClaeys, CorCorClaeysDeferm, LudoLudoDeferm2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1487Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistorsJournal article