Caymax, MattyMattyCaymaxBender, HugoHugoBenderBrijs, BertBertBrijsConard, ThierryThierryConardDe Gendt, StefanStefanDe GendtDelabie, AnneliesAnneliesDelabieHeyns, MarcMarcHeynsOnsia, BartBartOnsiaRagnarsson, Lars-AkeLars-AkeRagnarssonRichard, OlivierOlivierRichardVandervorst, WilfriedWilfriedVandervorstVan Elshocht, SvenSvenVan ElshochtZhao, ChaoChaoZhaoMaes, J.W.J.W.MaesDaté, L.L.DatéPique, D.D.PiqueYoung, E.E.YoungTsai, W.W.TsaiShimamoto, Y.Y.Shimamoto2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7298High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologiesProceedings paper