Highly doped low-temperature Si:P growth for source/drain formation in advanced Si nFETs

Rosseel, ErikErikRosseelKohen, DavidDavidKohenHikavyy, AndriyAndriyHikavyyPorret, ClémentClémentPorretLoo, RogerRogerLooTolle, JohnJohnTolleVandooren, AnneAnneVandoorenVeloso, AnabelaAnabelaVelosoCollaert, NadineNadineCollaertMocuta, DanDanMocutaLanger, RobertRobertLanger2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29325Highly doped low-temperature Si:P growth for source/drain formation in advanced Si nFETsMeeting abstract