Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique

Abou-Khalil, M.M.Abou-KhalilSchreurs, DominiqueDominiqueSchreursMatsui, T.T.MatsuiWu, K.K.Wu2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1692Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo techniqueProceedings paper