Characterization of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy

Rosseel, ErikErikRosseelTirrito, MatteoMatteoTirritoPorret, ClémentClémentPorretDouhard, BastienBastienDouhardMeersschaut, JohanJohanMeersschautHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchiPourtois, GeoffreyGeoffreyPourtoisNakazaki, NobuyaNobuyaNakazakiTolle, JohnJohnTolle2021-10-272021-10-272019-06https://imec-publications.be/handle/20.500.12860/33909Characterization of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxyMeeting abstract