Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers

Shimura, YosukeYosukeShimuraSrinivasan, AshwynAshwynSrinivasanLoo, RogerRogerLoo2021-10-232021-10-232016-032162-8769https://imec-publications.be/handle/20.500.12860/27303Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layersJournal article10.1149/2.0301605jss