Li, KanKanLiZhang, En XiaEn XiaZhangGorchichko, MariiaMariiaGorchichkoWang, Peng FeiPeng FeiWangReaz, MahmudMahmudReazZhao, Simeng E.Simeng E.ZhaoHiblot, GaspardGaspardHiblotVan Huylenbroeck, StefaanStefaanVan HuylenbroeckJourdain, AnneAnneJourdainAlles, Michael L.Michael L.AllesReed, Robert A.Robert A.ReedFleetwood, Daniel M.Daniel M.FleetwoodSchrimpf, Ronald D.Ronald D.Schrimpf2022-02-242022-02-2420210018-9499WOS:000655537500035https://imec-publications.be/handle/20.500.12860/39130Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETsJournal article10.1109/TNS.2021.3065563WOS:0006555375000351/F NOISEBIAS DEPENDENCEBORDER TRAPSCHARGE YIELDMOS DEVICESDEFECTSBULKNMOSFETS