Challenges on surface conditioning in 3D device architectures: triple-gate finFETs, gate-all-around lateral and vertical nanowireFETs

Veloso, AnabelaAnabelaVelosoParaschiv, VasileVasileParaschivVecchio, EmmaEmmaVecchioDevriendt, KatiaKatiaDevriendtLi, WaikinWaikinLiSimoen, EddyEddySimoenChan, BTBTChanTao, ZhengZhengTaoRosseel, ErikErikRosseelLoo, RogerRogerLooMilenin, AlexeyAlexeyMileninKunert, BernardetteBernardetteKunertTeugels, LieveLieveTeugelsSebaai, FaridFaridSebaaiLorant, ChristopheChristopheLorantvan Dorp, DennisDennisvan DorpAltamirano Sanchez, EfrainEfrainAltamirano SanchezBrus, StephanStephanBrusMarien, PhilippePhilippeMarienSibaja-Hernandez, ArturoArturoSibaja-HernandezMatagne, PhilippePhilippeMatagneWaldron, NiamhNiamhWaldronMocuta, DanDanMocutaCollaert, NadineNadineCollaert2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29810Challenges on surface conditioning in 3D device architectures: triple-gate finFETs, gate-all-around lateral and vertical nanowireFETsMeeting abstracthttps://ecs.confex.com/ecs/232/webprogram/Paper101970.html