Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs

Simoen, EddyEddySimoenAkheyar, AmalAmalAkheyarRohr, ErikaErikaRohrMercha, AbdelkarimAbdelkarimMerchaClaeys, CorCorClaeys2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16223Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETsMeeting abstract