Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics of AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Wu, Tian-LiTian-LiWuMarcon, DenisDenisMarconDe Jaeger, BriceBriceDe JaegerVan Hove, MarleenMarleenVan HoveBakeroot, BenoitBenoitBakerootStoffels, SteveSteveStoffelsGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutereRoelofs, RobinRobinRoelofs2021-10-232021-10-232015https://imec-publications.be/handle/20.500.12860/26193Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics of AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETsProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7112769