Analysis and optimisation of the 2D-dopant profile in a 90 nm CMOS technology using scanning spreading resistance microscopy

Eyben, PierrePierreEybenAlvarez, DavidDavidAlvarezJurczak, GosiaGosiaJurczakRooyackers, RitaRitaRooyackersDe Keersgieter, AnAnDe KeersgieterAugendre, EmmanuelEmmanuelAugendreVandervorst, WilfriedWilfriedVandervorst2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7559Analysis and optimisation of the 2D-dopant profile in a 90 nm CMOS technology using scanning spreading resistance microscopyMeeting abstract