Towards the integration of In53Ga47As on 300 mm Si for CMOS sub 7 nm node: development of thin graded InGaAs buffers

Mols, YvesYvesMolsKunert, BernardetteBernardetteKunertGaudin, GweltazGweltazGaudinLanger, RobertRobertLangerCaymax, MattyMattyCaymax2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25663Towards the integration of In53Ga47As on 300 mm Si for CMOS sub 7 nm node: development of thin graded InGaAs buffersMeeting abstract