Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs

Vandooren, AnneAnneVandoorenLeonelli, DanieleDanieleLeonelliRooyackers, RitaRitaRooyackersArstila, KaiKaiArstilaGroeseneken, GuidoGuidoGroesenekenHuyghebaert, CedricCedricHuyghebaert2021-10-202021-10-2020120038-1101https://imec-publications.be/handle/20.500.12860/21746Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETsJournal article