Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTs

Wu, Wei-MinWei-MinWuChen, Shih-HungShih-HungChenYan, DongyangDongyangYanParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2025-06-052024-12-012025-06-052024979-8-3503-6546-70739-5159WOS:001337944800020https://imec-publications.be/handle/20.500.12860/44881Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTsProceedings paper978-1-58537-353-6WOS:001337944800020