Enhancement of active phosphorus concentration in Ge CVD layers in view of group-IV optical interconnections using low temperature in-situ doping and high order Ge precursors

Shimura, YosukeYosukeShimuraSrinivasan, AshwynAshwynSrinivasanVan Thourhout, DriesDriesVan ThourhoutVan Deun, R.R.Van DeunPantouvaki, MariannaMariannaPantouvakiVan Campenhout, JorisJorisVan CampenhoutLoo, RogerRogerLoo2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25902Enhancement of active phosphorus concentration in Ge CVD layers in view of group-IV optical interconnections using low temperature in-situ doping and high order Ge precursorsProceedings paper