0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

Ozdemir, Cenk IbrahimCenk IbrahimOzdemirde Koninck, YannickYannickde KoninckYudistira, DiditDiditYudistiraKuznetsova, NadezdaNadezdaKuznetsovaBaryshnikova, MarinaMarinaBaryshnikovavan Thourhout, DriesDriesvan ThourhoutKunert, BernardetteBernardetteKunertPantouvaki, MariannaMariannaPantouvakivan Campenhout, JorisJorisvan Campenhout2023-02-022021-11-022023-02-022023-02-022020naWOS:000662178500185https://imec-publications.be/handle/20.500.12860/378210.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si WaferProceedings paper10.1109/ECOC48923.2020.9333310978-1-7281-7361-0WOS:000662178500185