Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactor

Vanhollebeke, KoenKoenVanhollebekeConsidine, L.L.ConsidineMoerman, IngridIngridMoermanDemeester, PietPietDemeesterThrush, E. J.E. J.ThrushCrawley, J. A.J. A.Crawley2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/3101Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactorJournal article