The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate

Chang, ShaneShaneChangZhao, MingMingZhaoSpampinato, ValentinaValentinaSpampinatoFranquet, AlexisAlexisFranquetChang, liLiliLiChang2021-10-282021-10-2820200268-1242https://imec-publications.be/handle/20.500.12860/34879The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrateJournal articlehttps://iopscience.iop.org/article/10.1088/1361-6641/ab7149