Superior reliability and reduced time-dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerMitard, JeromeJeromeMitardToledano Luque, MariaMariaToledano LuqueCrupi, FeliceFeliceCrupiEneman, GeertGeertEnemanRoussel, PhilippePhilippeRousselGrasser, TiborTiborGrasserCho, Moon JuMoon JuChoKauerauf, ThomasThomasKaueraufWitters, LiesbethLiesbethWittersHellings, GeertGeertHellingsRagnarsson, Lars-AkeLars-AkeRagnarssonHoriguchi, NaotoNaotoHoriguchiHeyns, MarcMarcHeynsGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20688Superior reliability and reduced time-dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applicationsProceedings paper