Characterization of thermal and electrical stability of MOCVD HfO2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies

Rittersma, ChrisChrisRittersmaLoo, JosineJosineLooPonomarev, YouriYouriPonomarevVerheijen, M.A.M.A.VerheijenKaiser, M.M.KaiserRoozeboom, F.F.RoozeboomVan Elshocht, SvenSvenVan ElshochtCaymax, MattyMattyCaymax2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9513Characterization of thermal and electrical stability of MOCVD HfO2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologiesJournal article