Thermal Annealing of Graphene Implanted with Mn at Ultralow Energies: From Disordered and Contaminated to Nearly Pristine Graphene

Lin, Pin-ChengPin-ChengLinVillarreal, RenanRenanVillarrealBana, HarshHarshBanaZarkua, ZviadiZviadiZarkuaHendriks, VinceVinceHendriksTsai, Hung-ChiehHung-ChiehTsaiAuge, ManuelManuelAugeJunge, FelixFelixJungeHofsaess, HansHansHofsaessTosi, EzequielEzequielTosiLacovig, PaoloPaoloLacovigLizzit, SilvanoSilvanoLizzitZhao, WenjuanWenjuanZhaoDi Santo, GiovanniGiovanniDi SantoPetaccia, LucaLucaPetacciaDe Feyter, StevenStevenDe FeyterDe Gendt, StefanStefanDe GendtBrems, StevenStevenBremsPereira, Lino M. C.Lino M. C.Pereira2022-12-012022-07-142022-12-0120221932-7447WOS:000821155200001https://imec-publications.be/handle/20.500.12860/40114Thermal Annealing of Graphene Implanted with Mn at Ultralow Energies: From Disordered and Contaminated to Nearly Pristine GrapheneJournal article10.1021/acs.jpcc.2c00855WOS:000821155200001SINGLE-LAYER GRAPHENEION-IMPLANTATIONELECTRONIC-STRUCTURECU(111)GROWTHOXIDATIONFILMSXPSCU