Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE

Cheng, KaiKaiChengMotsnyi, VasylVasylMotsnyiLeys, MaartenMaartenLeysDegroote, StefanStefanDegrooteSijmus, BramBramSijmusGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11853Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPEProceedings paper