Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

de Andrade, Maria Gloria CanoMaria Gloria Canode AndradeNogueira, Carlos RobertoCarlos RobertoNogueiraGraciano Junior, NiltonNiltonGraciano JuniorDoria, Rodrigo T.Rodrigo T.DoriaTrevisoli, RenanRenanTrevisoliSimoen, EddyEddySimoen2024-03-072023-12-142024-03-0720240038-1101WOS:001111304200001https://imec-publications.be/handle/20.500.12860/43259Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientationJournal article10.1016/j.sse.2023.108807WOS:001111304200001DEEP-LEVELS