Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions

Vandemaele, MichielMichielVandemaeleFranco, JacopoJacopoFrancoTyaginov, StanislavStanislavTyaginovGroeseneken, GuidoGuidoGroesenekenKaczer, BenBenKaczer2022-02-232022-02-2320210018-9383WOS:000633331000008https://imec-publications.be/handle/20.500.12860/39072Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy DistributionsJournal article10.1109/TED.2021.3061025WOS:000633331000008