Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Hu, JieJieHuStoffels, SteveSteveStoffelsLenci, SilviaSilviaLenciDe Jaeger, BriceBriceDe JaegerRonchi, NicoloNicoloRonchiTallarico, AndreaAndreaTallaricoWellekens, DirkDirkWellekensYou, ShuzhenShuzhenYouBakeroot, BenoitBenoitBakerootGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-2320160018-9383https://imec-publications.be/handle/20.500.12860/26746Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge terminationJournal articlehttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7517385