Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As

Afanasiev, ValeriValeriAfanasievChou, H.Y.H.Y.ChouThoan, N.H.N.H.ThoanAdelmann, ChristophChristophAdelmannLin, DennisDennisLinHoussa, MichelMichelHoussaStesmans, AndreAndreStesmans2021-10-202021-10-2020120003-6951https://imec-publications.be/handle/20.500.12860/20265Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47AsJournal articlehttp://dx.doi.org/10.1063/1.4710553