Modeling pFET currents after soft breakdown at different gate locations

Kaczer, BenBenKaczerDe Keersgieter, AnAnDe KeersgieterDegraeve, RobinRobinDegraeveCrupi, FeliceFeliceCrupiGroeseneken, GuidoGuidoGroeseneken2021-10-152021-10-152004-04https://imec-publications.be/handle/20.500.12860/9106Modeling pFET currents after soft breakdown at different gate locationsJournal article