Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

El Kazzi, SalimSalimEl KazziAlian, AliRezaAliRezaAlianHsu, BrentBrentHsuVerhulst, AnneAnneVerhulstWalke, AmeyAmeyWalkeFavia, PaolaPaolaFaviaDouhard, BastienBastienDouharddel Alamo, Jesus Del AlamoJesus Del Alamodel AlamoLu, WenjieWenjieLuCollaert, NadineNadineCollaertMerckling, ClementClementMerckling2021-10-252021-10-2520180022-0248https://imec-publications.be/handle/20.500.12860/30665Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diodeJournal articlehttps://www.sciencedirect.com/science/article/pii/S0022024817307431