Evanescent Coupling Degradation from Particle-Induced Voids in III-V/Si Micro-transfer-printed Integrated Lasers

Liu, YangYangLiuZhang, JingJingZhangDelli, EvangeliaEvangeliaDelliRoelkens, GuntherGuntherRoelkens2026-09-072026-09-072026978-1-5106-9697-60277-786Xhttps://imec-publications.be/handle/20.500.12860/60221Void-induced evanescent coupling degradation in InP-on-Si lasers is analyzed. A location-dependent analysis reveals 100nm particles at the tapers cause a 0.913 dB loss (vs. 0.058 dB at mid-coupon). Guidelines for void-tolerant evanescent interfaces on the SiPh platform are proposed.engEvanescent Coupling Degradation from Particle-Induced Voids in III-V/Si Micro-transfer-printed Integrated LasersProceedings paper10.1117/12.3078863WOS:001776775500005