Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

Smets, QuentinQuentinSmetsSchram, TomTomSchramVerreck, DevinDevinVerreckCott, DaireDaireCottGroven, BenjaminBenjaminGrovenAhmed, ZubairZubairAhmedKaczer, BenBenKaczerMitard, JeromeJeromeMitardWu, XiangyuXiangyuWuKundu, SouvikSouvikKunduMertens, HansHansMertensRadisic, DunjaDunjaRadisicThiam, ArameArameThiamLi, WaikinWaikinLiDupuy, EmmanuelEmmanuelDupuyTao, ZhengZhengTaoVandersmissen, KevinKevinVandersmissenMaurice, ThibautThibautMauriceLin, DennisDennisLinMorin, PierrePierreMorinAsselberghs, IngeIngeAsselberghsRadu, IulianaIulianaRadu2023-08-082023-06-202023-08-0820212380-9248WOS:000812325400023https://imec-publications.be/handle/20.500.12860/41825Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FABProceedings paper10.1109/IEDM19574.2021.9720517978-1-6654-2572-8WOS:000812325400023