Yu, HaoHaoYuElKashlan, Rana Y.Rana Y.ElKashlanTsai, M. -C.M. -C.TsaiYang, Y.Y.YangGuenach, MamounMamounGuenachKuo, Y.-C.Y.-C.KuoYadav, SachinSachinYadavO'Sullivan, BarryBarryO'SullivanRathi, AartiAartiRathiGupta, AmratanshAmratanshGuptaXiao, D.D.XiaoDesset, ClaudeClaudeDessetAlian, AliRezaAliRezaAlianPeralagu, UthayasankaranUthayasankaranPeralaguAfanasiev, ValeriValeriAfanasievWu, T. -L.T. -L.WuParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2026-06-082026-06-082025979-8-3315-0478-61541-7026https://imec-publications.be/handle/20.500.12860/59625In this work, we discuss whether a positive gate bias instability (ΔVth) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of ΔVth, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive ΔVth issue.engProceedings paper10.1109/irps48204.2025.10983812WOS:001546466200185